The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Aug. 15, 2022
Applicant:
Skyworks Solutions, Inc., Irvine, CA (US);
Inventors:
Yun Shi, San Diego, CA (US);
John Tzung-Yin Lee, Costa Mesa, CA (US);
Assignee:
Skyworks Solutions, Inc., Irvine, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H03K 17/687 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7839 (2013.01); H03K 17/6871 (2013.01); H03F 3/245 (2013.01); H03F 2200/451 (2013.01);
Abstract
Circuits, systems, devices, and methods related to transistors with Schottky barriers are discussed herein. For example, a method of fabricating a transistor can include forming a p-well or an n-well in a substrate and forming a gate for the transistor. The method can also include doping a region within the p-well or n-well with a concentration below a threshold and forming a conductor layer on the doped region.