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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11742408 B1

PDFFull Text
Date of Patent:
Aug. 29, 2023

Filed:

Jan. 04, 2021

Cascode amplifier optimization

Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Yun Shi, San Diego, CA (US);

Paul T. DiCarlo, Marlborough, MA (US);

Hailing Wang, Acton, MA (US);

Assignee:

SKYWORKS SOLUTIONS, INC., Irvine, CA (US);

Attorney:

Lando & Anastasi, LLP

Primary Examiner:

Nilufa Rahim

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H03F 1/22 (2006.01); H01L 29/423 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H03F 3/04 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66492 (2013.01); H01L 21/26513 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823462 (2013.01); H01L 21/823493 (2013.01); H01L 21/84 (2013.01); H01L 29/1041 (2013.01); H01L 29/42368 (2013.01); H01L 29/66659 (2013.01); H01L 29/66772 (2013.01); H01L 29/7833 (2013.01); H01L 29/7835 (2013.01); H03F 1/223 (2013.01); H03F 3/195 (2013.01); H03F 3/245 (2013.01); H01L 21/26586 (2013.01); H01L 27/1203 (2013.01); H01L 29/1045 (2013.01); H03F 3/04 (2013.01); H03F 2200/451 (2013.01);
Abstract

A method of fabricating a cascode amplifier including a common-source device and a common-gate device includes performing one or more of ion implantation of a well of the common-source device, ion implantation of a source extension and/or drain extension of the common-source device, or a halo ion implantation of the common-source device with one or more of a different ionic species, a different dosage, a different energy, or a different tilt angle than a corresponding one or more of ion implantation of a well of the common-gate device, ion implantation of a source and/or drain extension of the common-gate device, or a halo ion implantation of the common-gate device.

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