The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2014

Filed:

Nov. 11, 2011
Applicants:

David L. Harame, Essex Junction, VT (US);

Qizhi Liu, Lexington, MA (US);

Robert M. Rassel, Colchester, VT (US);

Inventors:

David L. Harame, Essex Junction, VT (US);

Qizhi Liu, Lexington, MA (US);

Robert M. Rassel, Colchester, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8222 (2006.01); H01L 29/47 (2006.01); H01L 27/07 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/872 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 29/47 (2013.01); H01L 27/0766 (2013.01); H01L 29/66143 (2013.01); H01L 29/66234 (2013.01); H01L 29/7322 (2013.01); H01L 29/872 (2013.01); H01L 29/0821 (2013.01); H01L 29/161 (2013.01);
Abstract

Schottky barrier diodes, methods for fabricating Schottky barrier diodes, and design structures for a Schottky barrier diode. A guard ring for a Schottky barrier diode is formed with a selective epitaxial growth process. The guard ring for the Schottky barrier diode and an extrinsic base of a vertical bipolar junction diode on a different device region than the Schottky barrier diode may be concurrently formed using the same selective epitaxial growth process.


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