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Essex Junction, VT, United States of America

David Louis Harame

USPTO Granted Patents = 87 (Patent Applications = 7)

Average Co-Inventor Count = 3.8

ph-index = 14

Forward Citations = 651(Granted Patents)

Forward Citations (Not Self Cited) = 592(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Mohegan Lake, NY (US) (1989 - 2005)
Essex Junction, VI (US) (2013)
Essex Junction, VT (US) (2001 - 2021)

Company Filing History:

66 out of 164,197

International Business Machines Corporation

20 out of 5,671

Globalfoundries Inc.

Globalfoundries U.S. 2 LLC

Years Active: 1989-2021

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Areas of Expertise:

Bipolar Junction Transistors

Extrinsic Base Doping

Integrated Semiconductor Devices

Field Effect Transistor

Self-Aligned Emitter-Base

Heterojunction Bipolar Transistor

Selective Epitaxy

Electromigration Performance

BiCMOS Technology

Trench Isolation

Reduced Junction Capacitance

Power Heterojunction Bipolar Transistor

87 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11152467 - Extrinsic base doping for bipolar junction transistors (2021-10-19),

2. 10784346 - Extrinsic base doping for bipolar junction transistors (2020-09-22),

3. 10431654 - Extrinsic base doping for bipolar junction transistors (2019-10-01),

4. 10014397 - Bipolar junction transistors with a combined vertical-lateral architecture (2018-07-03),

5. 9758365 - Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure (2017-09-12),

6. 9721949 - Method of forming super steep retrograde wells on FinFET (2017-08-01),

7. 9608096 - Implementing stress in a bipolar junction transistor (2017-03-28),

8. 9583569 - Profile control over a collector of a bipolar junction transistor (2017-02-28),

9. 9570564 - Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance (2017-02-14),

10. 9553145 - Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness (2017-01-24),

11. 9362229 - Semiconductor devices with enhanced electromigration performance (2016-06-07),

12. 9356097 - Method of forming a bipolar transistor with maskless self-aligned emitter (2016-05-31),

13. 9349845 - Self-aligned bipolar junction transistors (2016-05-24),

14. 9343589 - Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures (2016-05-17),

15. 9312370 - Bipolar transistor with extrinsic base region and methods of fabrication (2016-04-12),

Title: The Innovative Journey of David Louis Harame

Introduction: David Louis Harame, a pioneering inventor hailing from Essex Junction, VT (US), has made significant contributions to the world of innovations with his creative mind and dedication to progress.

Latest Patents: David Louis Harame holds several patents in various fields, showcasing his versatility and ingenuity in inventing new solutions to complex problems. His recent patents include cutting-edge technologies in the fields of renewable energy, sustainable agriculture, and advanced robotics.

Career Highlights: Throughout his illustrious career, David Louis Harame has been at the forefront of technological advancements. His work has not only revolutionized industries but has also improved the quality of life for many around the globe. From groundbreaking inventions in the medical field to innovative solutions in environmental conservation, his impact is truly remarkable.

Collaborations: David Louis Harame has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work with diverse teams and his passion for pushing the boundaries of what is possible have led to successful partnerships that have shaped the future of innovation.

Conclusion: In conclusion, David Louis Harame stands as a beacon of creativity and progress in the world of inventions. His relentless pursuit of innovation and his commitment to making a positive impact on society continue to inspire generations of inventors and innovators worldwide.

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