The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Jun. 25, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Renata Camillo-Castillo, Essex Junction, VT (US);
David L. Harame, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 21/2257 (2013.01); H01L 21/324 (2013.01); H01L 29/0653 (2013.01); H01L 29/0821 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01); H01L 29/66234 (2013.01); H01L 29/732 (2013.01);
Abstract
Device structure and fabrication methods for a bipolar junction transistor. A base layer is formed and an emitter is formed on a first portion of the base layer. A dopant-containing layer is deposited on a second portion of the base layer. Dopant is transferred from the dopant-containing layer into the second portion of the base layer to define an extrinsic base of the device structure.