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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9362229 B1

PDFFull Text
Date of Patent:
Jun. 07, 2016

Filed:

Oct. 16, 2014

Semiconductor devices with enhanced electromigration performance

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jeffrey P. Gambino, Westford, VT (US);

David L. Harame, Essex Junction, VT (US);

Baozhen Li, South Burlington, VT (US);

Timothy D. Sullivan, Underhill, VT (US);

Bjorn K. A. Zetterlund, Bolton, MA (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Anthony Canale

Andrew M. Calderon

Roberts Mlotkowski Safran & Cole, P.C.

Primary Examiner:

Chuong A Luu

Assistant Examiner:

Rodolfo Fortich

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76843 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Semiconductor devices with enhanced electromigration performance and methods of manufacture are disclosed. The method includes forming at least one metal line in electrical contact with a device. The method further includes forming at least one staple structure in electrical contact with the at least one metal line. The at least one staple structure is formed such that electrical current passing through the at least one metal line also passes through the at least staple structure to reduce electromigration issues.

Find Patent Forward Citations

Gambino, Jeffrey. (2016). Semiconductor devices with enhanced electromigration performance (U.S. Patent No. 9362229). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9362229

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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