The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jun. 25, 2013
International Business Machines Corporation, Armonk, NY (US);
David L. Harame, Essex Junction, VT (US);
Vikas K. Kaushal, Essex Junction, VT (US);
Marwan H. Khater, Astoria, NY (US);
Qizhi Liu, Lexington, MA (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Embodiments of the present invention include a method for forming a semiconductor emitter and the resulting structure. The invention comprises forming an epitaxial base layer on a semiconductor substrate. A dielectric layer is deposited over the epitaxial base layer. An opening is etched in a portion of the dielectric layer exposing a portion of the epitaxial base layer and a spacer is deposited along the sidewall of the opening. The emitter is grown from the epitaxial base layer to overlap the top surface of the spacer and a portion of the dielectric layer. The single crystal emitter is formed without a mask and without the requirement of subsequent patterning processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile