The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Sep. 24, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
David L. Harame, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/732 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 27/082 (2006.01); H01L 29/73 (2006.01); G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
H01L 29/735 (2013.01); G06F 17/5045 (2013.01); H01L 27/0823 (2013.01); H01L 29/0649 (2013.01); H01L 29/1004 (2013.01); H01L 29/1008 (2013.01); H01L 29/66234 (2013.01); H01L 29/66272 (2013.01); H01L 29/73 (2013.01); H01L 29/732 (2013.01);
Abstract
Device structures and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.