The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Oct. 02, 2015
Globalfoundries Inc., Grand Cayman, KY;
Renata Camillo-Castillo, Essex Junction, VT (US);
Qizhi Liu, Essex Junction, VT (US);
Vibhor Jain, Essex Junction, VT (US);
James W. Adkisson, Jericho, VT (US);
David L. Harame, Essex Junction, VT (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Device structure and fabrication methods for a bipolar junction transistor. One or more trench isolation regions are formed in a substrate to define a device region having a first width. A protect layer is formed on a top surface of the one or more trench isolation regions and a top surface of the device region. An opening is formed in the protect layer. The opening is coincides with the top surface of the first device region and has a second width that is less than or equal to the first width of the first device region. A base layer is formed that has a first section on the device region inside the first opening and a second section on the protect layer.