The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Jul. 19, 2019
International Business Machines Corporation, Armonk, NY (US);
Renata Camillo-Castillo, Essex Junction, VT (US);
David L. Harame, Essex Junction, VT (US);
Qizhi Liu, Lexington, MA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method includes forming a base layer on a top surface of a substrate. A dielectric layer is formed on exposed surfaces of the base layer. A hardmask layer is formed on the base layer and the dielectric layer. A pattern is formed from the hardmask with a first opening and a second opening. Portions of a dielectric layer are removed from the top surface of the base layer at positions consistent with the pattern of the first opening and the second opening to form exposed surfaces defined as a first window and a second window in the dielectric layer. Deposits of a dopant-containing layer are limited on the exposed surfaces of: a first portion on the top surface of the base layer inside of the first window, and a second portion on the top surface of the base layer inside of the second window.