The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Feb. 19, 2018
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Liming Li, Singapore, SG;
Shaoqiang Zhang, Singapore, SG;
Ruchil Kumar Jain, Singapore, SG;
Raj Verma Purakh, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/761 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/761 (2013.01); H01L 21/823814 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0629 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/4933 (2013.01); H01L 29/6659 (2013.01); H01L 29/66659 (2013.01); H01L 29/66689 (2013.01); H01L 29/7833 (2013.01);
Abstract
A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance.