The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Oct. 30, 2023
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Ping Zheng, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Kiok Boone Elgin Quek, Singapore, SG;
Soh Yun Siah, Singapore, SG;
Shiang Yang Ong, Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure comprises a semiconductor layer on a semiconductor substrate, a cathode comprising a first doped region in the semiconductor substrate, and an anode comprising a second doped region adjacent to a top surface of the semiconductor layer. The structure further comprises a first trench isolation structure including a first conductor layer extending from the top surface of the semiconductor layer through the semiconductor layer to the first doped region. The first conductor layer of the first trench isolation structure is connected to the first doped region. The structure further comprises a second trench isolation structure adjacent to the first trench isolation structure. The second trench isolation structure includes a second conductor layer extending from the top surface of the semiconductor layer fully through the first doped region.