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For the Inventor, By the Inventor

Singapore, Singapore

Soh Yun Siah

This inventor holds 28 USPTO granted patents and 4 published patent applications, primarily in Memory Device Technology. Top assignees: Globalfoundries Singapore Pte. Ltd., Chartered Semiconductor Manufacturing Ltd (Corporation), Globalfoundries Inc.. Active years: 2000-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Soh Yun Siah. Retrieved from https://idiyas.com/inventor/soh-yun-siah

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 71.4

Average Co-Inventor Count = 3.9

ph-index = 9

Forward Citations = 289(Granted Patents)


Company Filing History:

goldMedal16 out of 1,060 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal11 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
bronzeMedal1 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 854 
 
National University of Singapore
 patents
where one patent can have more than one assignee

Years Active: 2000-2026

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Areas of Expertise:
Single-Photon Avalanche Diodes
Neuromorphic Memories
Integrated Circuits
Memory Devices
CMOS Devices
Shallow Trench Isolation
Dielectric Blocking Layer
MRAM Cell
Silicidation
Power Supply Integration
Deep Sub-Micron Fabrication
Low-Leakage Architecture
28 patents (USPTO):Explore Patents
1. 12733267 - Single-photon avalanche diodes with hybrid trench isolation structures (2026-09-08),
2. 11158646 - Memory device with dielectric blocking layer for improving interpoly dielectric breakdown (2021-10-26),
3. 11119917 - Neuromorphic memories with split gate flash multi-level cell and method of making the same (2021-09-14),
4. 10608046 - Integrated two-terminal device with logic device for embedded application (2020-03-31),
5. 10446607 - Integrated two-terminal device with logic device for embedded application (2019-10-15),
6. 10439129 - Shielded MRAM cell (2019-10-08),
7. 10224338 - Cost-effective method to form a reliable memory device with selective silicidation and resulting device (2019-03-05),
8. 10062641 - Integrated circuits including a dummy metal feature and methods of forming the same (2018-08-28),
9. 9929165 - Method for producing integrated circuit memory cells with less dedicated lithographic steps (2018-03-27),
10. 9905282 - Top electrode dome formation (2018-02-27),
11. 9793208 - Plasma discharge path (2017-10-17),
12. 9236391 - Method of forming split-gate cell for non-volative memory devices (2016-01-12),
13. 9111866 - Method of forming split-gate cell for non-volative memory devices (2015-08-18),
14. 8957523 - Dielectric posts in metal layers (2015-02-17),
15. 8759947 - Back-side MOM/MIM devices (2014-06-24),

Title: Innovations in Memory Technology by Soh Yun Siah

Introduction

Soh Yun Siah is a distinguished inventor based in Singapore, SG, renowned for his contributions to the field of memory technology. Holding a remarkable portfolio of 27 patents, his innovations have greatly impacted the evolution of memory devices.

Latest Patents

Among his latest works is a patent for a memory device that features a dielectric blocking layer aimed at improving interpoly dielectric breakdown. This invention signifies a crucial advancement in memory storage techniques. Additionally, he has developed neuromorphic memories that utilize split gate flash multi-level cell (MLC) technology. This innovative method allows dynamic programming and erasure of memory cells, enhancing artificial neuromorphic processing capabilities and enabling the sensation of visual imagery.

Career Highlights

Soh Yun Siah has amassed significant experience working with prominent companies in the semiconductor industry, including Globalfoundries Singapore Pte. Ltd. and Chartered Semiconductor Manufacturing Ltd. His tenure at these corporations has played a vital role in shaping his path as an inventor.

Collaborations

Throughout his career, Soh has collaborated with talented individuals, including his coworkers Juan Boon Tan and Chong Wee Lim. Their joint efforts have undoubtedly contributed to the development of transformative technologies in the realm of memory devices.

Conclusion

Soh Yun Siah’s extensive number of patents and ongoing innovations in memory technology position him as a leading figure in the industry. His work continues to pave the way for future developments, influencing how memory devices are designed and utilized in various applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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