The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

May. 30, 2017
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Wanbing Yi, Singapore, SG;

Curtis Chun-I Hsieh, Singapore, SG;

Soh Yun Siah, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/15 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/30 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/16 (2013.01); H01F 10/3254 (2013.01); H01F 41/303 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01);
Abstract

Methods of fabricating a dome-shaped MTJ TE and the resulting devices are provided. Embodiments include forming a MRAM stack having a laterally separated MTJ structures and the MRAM and a logic stack each having a SiN layer; forming first trenches through the MRAM stack to a portion of the SiN layer above an MTJ structure; forming second trenches through the SiN layer fully landing on an upper portion of the MTJ structures and removing the SiN layer of the logic stack; forming a TaN layer over the MRAM and logic stack; removing portions of the TaN layer on opposite sides of the MTJ structures and therebetween; forming an oxide layer over the MRAM and logic stacks; and forming vias through the oxide layer of the MRAM stack down the TaN layer above MTJ structures and a via through the logic stack.


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