The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Mar. 07, 2013
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Yu Chen, Singapore, SG;

Huajun Liu, Singapore, SG;

Siow Lee Chwa, Singapore, SG;

Soh Yun Siah, Singapore, SG;

Yanxia Shao, Singapore, SG;

Yoke Leng Lim, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 27/11521 (2013.01); H01L 29/42328 (2013.01); H01L 29/42332 (2013.01); H01L 29/42344 (2013.01);
Abstract

Fabrication of a slim split gate cell and the resulting device are disclosed. Embodiments include forming a first gate on a substrate, the first gate having an upper surface and a hard-mask covering the upper surface, forming an interpoly isolation layer on side surfaces of the first gate and the hard-mask, forming a second gate on one side of the first gate, with an uppermost point of the second gate below the upper surface of the first gate, removing the hard-mask, forming spacers on exposed vertical surfaces, and forming a salicide on exposed surfaces of the first and second gates.


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