The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2012
Filed:
Jun. 15, 2007
Henry K. Utomo, Newburgh, NY (US);
Shailendra Mishra, Singapore, SG;
Lee Wee Teo, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Henry K. Utomo, Newburgh, NY (US);
Shailendra Mishra, Singapore, SG;
Lee Wee Teo, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
International Business Machines Corporation, Armonk, NY (US);
Global Foundries Inc., Grand Cayman, KY;
Abstract
Embodiments of the invention provide a method of forming a field-effect-transistor (FET). The method includes implanting one or more n-type dopants to create one or more implanted regions with at least a portion of the implanted regions being designated as regions for forming source and drain extensions of the FET; activating the implanted regions; etching with a chlorine based etchant to create openings in the implanted regions, and forming the source and drain extensions by exptaxially growing embedded silicon germanium in the openings. Structure of a semiconductor field-effect-transistor made thereof is also provided.