The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Aug. 20, 2009
Applicants:

Shyue Seng Tan, Singapore, SG;

Lee Wee Teo, Singapore, SG;

Ming Zhu, Shanghai, CN;

Inventors:

Shyue Seng Tan, Singapore, SG;

Lee Wee Teo, Singapore, SG;

Ming Zhu, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/336 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01);
Abstract

A method of manufacture of an integrated circuit system includes: providing a semiconductor substrate; implanting a well region, having a first conductivity, on the semiconductor substrate; patterning a gate oxide layer on the well region; implanting a source, having a second conductivity, at an angle for implanting under the gate oxide layer; selectively implanting a dopant pocket, having a third conductivity that is opposite the second conductivity, at the angle for forming the dopant pocket under the gate oxide layer; and implanting a drain, having the third conductivity, for forming a transistor channel asymmetrically positioned under the gate oxide layer.


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