The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Mar. 18, 2008
Jae-hak Kim, Seoul, KR;
Griselda Bonilla, Fishkill, NY (US);
Steven E. Molis, Patterson, NY (US);
Darryl D. Restaino, Modena, NJ (US);
Hosadurga Shobha, Yorktown Heights, NY (US);
Johnny Widodo, Singapore, SG;
Jae-hak Kim, Seoul, KR;
Griselda Bonilla, Fishkill, NY (US);
Steven E. Molis, Patterson, NY (US);
Darryl D. Restaino, Modena, NJ (US);
Hosadurga Shobha, Yorktown Heights, NY (US);
Johnny Widodo, Singapore, SG;
Samsung Electronics Co., Ltd., , KR;
International Business Machines Corporation, Armonk, NY (US);
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 Å to about 50 Å and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.