The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
May. 19, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/02532 (2013.01); H01L 21/311 (2013.01); H01L 21/3105 (2013.01); H01L 21/31051 (2013.01); H01L 21/31144 (2013.01); H01L 29/0684 (2013.01); H01L 29/12 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract
A lithographic stack over a raised structure (e.g., fin) of a non-planar semiconductor structure, such as a FinFET, includes a bottom layer of spin-on amorphous carbon or spin-on organic planarizing material, a hard mask layer of a nitride and/or an oxide on the spin-on layer, a layer of a developable bottom anti-reflective coating (dBARC) on the hard mask layer, and a top layer of photoresist. The stack is etched to expose and recess the raised structure, and epitaxial structure(s) are grown on the recess.