The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jun. 30, 2014
Globalfoundries Inc., Grand Cayman, KY;
Jianwei Peng, Ballston Lake, NY (US);
Xusheng Wu, Ballston Lake, NY (US);
Hong Yu, Rexford, NY (US);
Zhao Lun, Ballston Lake, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Approaches for forming an epitaxial (epi) source/drain (S/D) and/or a semiconductor device having an epi S/D are provided. In embodiments of the invention, a first portion of the epi S/D is formed in the S/D region on a fin in a finned substrate. After the first portion is formed, but before completion of the formation of the S/D, a secondary spacer is formed in the S/D region. Then, the remainder portion of the S/D is formed in the S/D region. As a result, the S/D is separated from the gate stack by the secondary spacer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile