IDiyas

For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Xinyuan Dou

USPTO Granted Patents = 15

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 41(Granted Patents)


Company Filing History:

goldMedal14 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2017-2021

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):
1. 11164954 - Gate capping layers of semiconductor devices (2021-11-02),
2. 10910276 - STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method (2021-02-02),
3. 10818557 - Integrated circuit structure to reduce soft-fail incidence and method of forming same (2020-10-27),
4. 10714380 - Method of forming smooth sidewall structures using spacer materials (2020-07-14),
5. 10643900 - Method to reduce FinFET short channel gate height (2020-05-05),
6. 10580857 - Method to form high performance fin profile for 12LP and above (2020-03-03),
7. 10522679 - Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures (2019-12-31),
8. 10347531 - Middle of the line (MOL) contact formation method and structure (2019-07-09),
9. 10153211 - Methods, apparatus, and system for fabricating finFET devices with increased breakdown voltage (2018-12-11),
10. 10090382 - Integrated circuit structure including single diffusion break and end isolation region, and methods of forming same (2018-10-02),
11. 10083873 - Semiconductor structure with uniform gate heights (2018-09-25),
12. 10074732 - Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages (2018-09-11),
13. 10043713 - Method to reduce FinFET short channel gate height (2018-08-07),
14. 10014296 - Fin-type field effect transistors with single-diffusion breaks and method (2018-07-03),
15. 9831098 - Methods for fabricating integrated circuits using flowable chemical vapor deposition techniques with low-temperature thermal annealing (2017-11-28),

Title: The Innovative Contributions of Xinyuan Dou in Semiconductor Technology

Introduction

Xinyuan Dou is a prominent inventor located in Clifton Park, NY, who has made significant strides in the field of semiconductor technology. With an impressive portfolio of 15 patents, Dou's inventions are at the forefront of advancing semiconductor device performance and reliability. His work has contributed to numerous innovations that push the boundaries of current technology.

Latest Patents

Among his latest patents, Dou has developed important advancements such as "Gate capping layers of semiconductor devices" which involves providing an active region, source and drain regions, a dielectric layer, and a gate structure with a nitrogen-infused dielectric layer. This invention highlights a novel approach to enhancing semiconductor devices by optimizing their structures for improved functionality.

Another notable patent is related to an "STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method." This patent introduces a structure consisting of an active region extending from a substrate, with a gate placed over the active region and an STI structure designed to improve performance by utilizing a tensile stress-inducing liner. Such innovations are crucial for improving the efficiency of field-effect transistors.

Career Highlights

Throughout his career, Xinyuan Dou has contributed his expertise to leading companies, notably GlobalFoundries Inc. and GlobalFoundries U.S. Inc. His work at these organizations has allowed him to focus on challenging projects that leverage his skills in semiconductor technology, resulting in valuable patents that advance the industry.

Collaborations

In his endeavors, Dou has collaborated with talented professionals such as Hong Yu and Sipeng Gu. These partnerships highlight the synergy of knowledge and creativity in the field, enabling groundbreaking developments in semiconductor technologies through teamwork and shared expertise.

Conclusion

Xinyuan Dou's contributions to semiconductor technology through his innovative patents and collaborations mark him as a pivotal figure in the industry. His advancements not only elevate the capabilities of semiconductor devices but also inspire future research and innovation in the field, proving the value of intellect and creativity in technological progress.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…