The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Oct. 26, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ravi P. Srivastava, Clifton Park, NY (US);

Sipeng Gu, Clifton Park, NY (US);

Sunil K. Singh, Mechanicville, NY (US);

Xinyuan Dou, Clifton Park, NY (US);

Akshey Sehgal, Malta, NY (US);

Zhiguo Sun, Halfmoon, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/0228 (2013.01); H01L 21/02203 (2013.01); H01L 21/76825 (2013.01);
Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to smooth sidewall structures and methods of manufacture. The method includes: forming a plurality of mandrel structures; forming a first spacer material on each of the plurality of mandrel structures; forming a second spacer material over the first spacer material; and removing the first spacer material and the plurality of mandrel structures to form a sidewall structure having a sidewall smoothness greater than the plurality of mandrel structures.


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