Methods, apparatus, and system for fabricating finfet devices with increased breakdown voltage

Abstract

At least one method, apparatus and system is disclosed herein for forming a fin field effect transistor (finFET) device having a reduced breakdown voltage. The method comprises forming a first gate structure on a substrate of a semiconductor wafer in a first layer, the gate structure extending to a height of about h above the substrate. A trench is formed in the first layer adjacent the first gate structure and extends from a height of about d to the substrate. A connector is formed in the trench between the substrate and a layer of the finFET above the first layer. The process of forming the connector comprises; forming a thin film oxide on the sidewalls of the trench extending from a height below h to about d; forming a liner in the trench, extending over the substrate and on the sidewalls to about the height d over the thin film oxide and forming a layer of tungsten in the trench over the liner.