The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2018
Filed:
Jun. 14, 2017
Globalfoundries Inc., Grand Cayman, KY;
Xinyuan Dou, Clifton Park, NY (US);
Hui Zang, Guilderland, NY (US);
Hong Yu, Rexford, NY (US);
Yanzhen Wang, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed herein includes, among other things, forming first and second fins for a short channel FinFET device ('SCD') and a long channel FinFET device ('LCD'), performing an oxidation process to form a sacrificial oxide material selectively on the channel portion of one of the first and second fins but not on the channel portion of the other of the first and second fins, removing the sacrificial oxide material from the fin on which it is formed so as to produce a reduced-size channel portion on that fin that is less than the initial size of the channel portion of the other non-oxidized fin, and forming first and second gate structures for the SCD and LCD devices.