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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10522679 B1

PDFFull Text
Date of Patent:
Dec. 31, 2019

Filed:

Oct. 30, 2017

Selective shallow trench isolation (sti) fill for stress engineering in semiconductor structures

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ashish Kumar Jha, Ballston Lake, NY (US);

Hong Yu, Rexford, NY (US);

Xinyuan Dou, Clifton Park, NY (US);

Xusheng Wu, Ballston Lake, NY (US);

Dongil Choi, Watervliet, NY (US);

Edmund K. Banghart, Pittsford, NY (US);

Md Khaled Hassan, Mechanicville, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Francois Pagette

Andrew M. Calderon

Roberts Mlotkowski Safran Cole & Calderon, P.C.

Primary Examiner:

Nduka E Ojeh

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7846 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01L 21/31116 (2013.01); H01L 21/823828 (2013.01); H01L 29/66545 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to selective shallow trench isolation (STI) fill material for stress engineering in semiconductor structures and methods of manufacture. The structure includes a single diffusion break (SDB) region having at least one shallow trench isolation (STI) region with a stress fill material within a recess of the at least one STI region. The stress fill material imparts a stress on a gate structure adjacent to the at least one STI region.

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