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For the Inventor, By the Inventor

Pittsford, NY, United States of America

Edmund Kenneth Banghart

This inventor holds 16 USPTO granted patents and 3 published patent applications and 3 EPO patents, primarily in Semiconductor Technology. Top assignees: Globalfoundries Inc., Eastman-Kodak Company, Globalfoundries U.S. Inc.. Active years: 1993-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Edmund Kenneth Banghart. Retrieved from https://idiyas.com/inventor/edmund-kenneth-banghart

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 75.0

 

Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 124(Granted Patents)


Location History:

  • Rochester, NY (US) (2015)
  • Pittsford, NY (US) (1993 - 2022)

Company Filing History:

goldMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal5 out of 21,608 
 
Eastman-Kodak Company
 patents
bronzeMedal2 out of 1,103 
 
Globalfoundries U.S. Inc.
 patents
4. 2 out of 52 
 
Truesense Imaging, Inc.
 patents
5. 1 out of 3,736 
 
Semiconductor Components Industries, LLC
 patents

Years Active: 1993-2022

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Areas of Expertise:
Non-volatile Memory
Heterojunction Bipolar Transistors
Shallow Trench Isolation
Fin Structures
Source/Drain Channel Interfaces
Image Sensors
Charge-coupled Devices
Processing Semiconductor Substrates
Antiblooming Structures
Backside Illuminated Sensors
16 patents (USPTO):Explore Patents
1. 11538815 - Non-volatile memory cell arrays with a sectioned active region and methods of manufacturing thereof (2022-12-27),
2. 11094805 - Lateral heterojunction bipolar transistors with asymmetric junctions (2021-08-17),
3. 10522679 - Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures (2019-12-31),
4. 10347740 - Fin structures and multi-Vt scheme based on tapered fin and method to form (2019-07-09),
5. 9679990 - Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabrication (2017-06-13),
6. 9583625 - Fin structures and multi-Vt scheme based on tapered fin and method to form (2017-02-28),
7. 9570291 - Semiconductor substrates and methods for processing semiconductor substrates (2017-02-14),
8. 9087860 - Fabricating fin-type field effect transistor with punch-through stop region (2015-07-21),
9. 8994139 - Lateral overflow drain and channel stop regions in image sensors (2015-03-31),
10. 8772891 - Lateral overflow drain and channel stop regions in image sensors (2014-07-08),
11. 8329499 - Method of forming lateral overflow drain and channel stop regions in image sensors (2012-12-11),
12. 6624453 - Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage (2003-09-23),
13. 5804465 - Compact isolation and antiblooming structure for full-frame CCD image (1998-09-08),
14. 5714776 - Compact isolation and antiblooming structure for full-frame CCD image (1998-02-03),
15. 5448089 - Charge-coupled device having an improved charge-transfer efficiency over (1995-09-05),

Title: Edmund Kenneth Banghart: A Pioneer in Non-Volatile Memory Cell Technology

Introduction

Edmund Kenneth Banghart is an accomplished inventor based in Pittsford, NY, with an impressive portfolio of 16 patents to his name. His innovative contributions to the field of semiconductor technology, particularly in non-volatile memory cell arrays, have made significant impacts in the industry.

Latest Patents

Banghart's most recent patents include advancements in non-volatile memory cell arrays and structures for the formation of these arrays. One of his noteworthy inventions is a non-volatile memory cell array that features a sectioned active region. This design incorporates an active region of a substrate with two sections—a first section that has a side edge and a second section that extends laterally from this edge. By utilizing fins positioned in the second section of the active region, along with gate structures extending over these components, Banghart has developed methods to enhance the performance and manufacturability of memory cells.

In addition, Banghart's patent related to lateral heterojunction bipolar transistors introduces innovative structures and manufacturing methods that improve transistor functionality. This invention specifies configurations of semiconductor layers that optimize the thickness of junctions, thereby enhancing device performance and reliability.

Career Highlights

Throughout his career, Banghart has worked with leading companies, including Globalfoundries Inc. and Eastman Kodak Company. His extensive experience in these organizations has equipped him with a profound understanding of semiconductor design and manufacturing processes, allowing him to bring transformative ideas to fruition.

Collaborations

Edmund Kenneth Banghart has collaborated with esteemed colleagues such as Eric Gordon Stevens and Xusheng Kevin Wu. These collaborations have fostered innovation and have played a vital role in advancing technology within their respective fields.

Conclusion

Edmund Kenneth Banghart's contributions have been pivotal in the development of advanced semiconductor technologies. His numerous patents not only underscore his innovative spirit but also highlight his dedication to improving memory cell technology. As the field continues to evolve, Banghart's work will undoubtedly inspire future generations of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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