The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Aug. 08, 2014
Globalfoundries Inc., Grand Cayman, KY;
Edmund Kenneth Banghart, Pittsford, NY (US);
Mitsuhiro Togo, Ballston Lake, NY (US);
Shesh Mani Pandey, Clifton Park, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Semiconductor structures and methods of fabrication are provided, with one or both of an extended source-to-channel interface or an extended drain-to-channel interface. The fabrication method includes, for instance, recessing a semiconductor material to form a cavity adjacent to a channel region of a semiconductor structure being fabricated, the recessing forming a first cavity surface and a second cavity surface within the cavity; and implanting one or more dopants into the semiconductor material through the first cavity surface to define an implanted region within the semiconductor material, and form an extended channel interface, the extended channel interface including, in part, an interface of the implanted region within the semiconductor material to the channel region of the semiconductor structure. In one embodiment, the semiconductor structure with the extended channel interface is a FinFET.