The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Jul. 22, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Oscar D. Restrepo, Clifton Park, NY (US);

Edmund K. Banghart, Pittsford, NY (US);

William Taylor, Clifton Park, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 27/105 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 27/0211 (2013.01); H01L 27/1052 (2013.01); H01L 29/0684 (2013.01); H01L 29/0692 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 29/785 (2013.01);
Abstract

Structures for an array of non-volatile memory cells and methods of forming a structure for an array of non-volatile memory cells. An active region of a substrate includes a first section having a side edge and a second section extending laterally from the side edge. The first section of the active region has a first length dimension in a direction parallel to the first side edge. The second section has a second length dimension in the direction parallel to the first side edge. The second length dimension is less than the first length dimension. A fin is positioned on the substrate in the second section of the active region. A gate structure extends over the fin and the second section of the active region.


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