The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jan. 17, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Alexander Derrickson, Troy, NY (US);
Edmund K. Banghart, Pittsford, NY (US);
Alexander Martin, Greenfield Center, NY (US);
Ryan Sporer, Mechanicville, NY (US);
Jagar Singh, Clifton Park, NY (US);
Katherina Babich, Cold Spring, NY (US);
George R. Mulfinger, Wilton, NY (US);
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Abstract
Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A first portion of a first semiconductor layer defines an emitter, a first portion of a second semiconductor layer defines a collector, and a base includes respective second portions of the first and second semiconductor layers that are laterally positioned between the first portion of the first semiconductor layer and the first portion of the second semiconductor layer. The first portion of the first semiconductor layer has a first thickness, and the first portion of the second semiconductor layer has a second thickness that is greater than the first thickness. The first portion and the second portion of the first semiconductor layer adjoin at a first junction having the first thickness. The first portion and the second portion of the second semiconductor layer adjoin at a second junction having the second thickness.