The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Mar. 08, 2012
Applicants:
Edmund K. Banghart, Rochester, NY (US);
Eric G. Stevens, Rochester, NY (US);
Hung Q. Doan, Rochester, NY (US);
Inventors:
Edmund K. Banghart, Rochester, NY (US);
Eric G. Stevens, Rochester, NY (US);
Hung Q. Doan, Rochester, NY (US);
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14887 (2013.01); H01L 27/14656 (2013.01); H01L 27/14674 (2013.01); H01L 27/14683 (2013.01); H01L 27/1485 (2013.01);
Abstract
A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.