The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Oct. 31, 2017
Globalfoundries Inc., Grand Cayman, KY;
Wei Hong, Clifton Park, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Yanping Shen, Saratoga Springs, NY (US);
Yi Qi, Niskayuna, NY (US);
Yongjun Shi, Clifton Park, NY (US);
Hui Zang, Guilderland, NY (US);
Edward Reis, Ballston Spa, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Methods form integrated circuit structures that include a semiconductor layer having at least one fin. At least three gate stacks contact, and are spaced along, the top of the fin. An insulator in trenches in the fin contacts the first and third of the gate stacks, and extends into the fin from the first and third gate stacks. Source and drain regions in the fin are adjacent a second of the gate stacks. The second gate stack is between the first and third gate stacks along the top of the fin. Additionally, a protective liner is in the trench between a top portion of the insulator a bottom portion of the insulator.