The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Oct. 27, 2017
Globalfoundries Inc., Grand Cayman, KY;
Alina Vinslava, Ballston Lake, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Yongjun Shi, Clifton Park, NY (US);
Jianwei Peng, Latham, NY (US);
Jianghu Yan, Singapore, SG;
Yi Qi, Niskayuna, NY (US);
GLOBALFOUNDRIES Inc., Grand Canyon, KY;
Abstract
Methods of forming a field-effect transistor and structures for a field-effect transistor. A gate structure is formed that overlaps with a channel region in a semiconductor fin. The semiconductor fin is etched with a first etching process to form a first cavity extending into the semiconductor fin adjacent to the channel region. The semiconductor fin is etched with a second etching process to form a second cavity that is volumetrically smaller than the first cavity and that adjoins the first cavity.