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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10700173 B1

PDFFull Text
Date of Patent:
Jun. 30, 2020

Filed:

Apr. 10, 2018

Finfet device with a wrap-around silicide source/drain contact structure

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Yi Qi, Niskayuna, NY (US);

Hsien-Ching Lo, Clifton Park, NY (US);

Hong Yu, Rexford, NY (US);

Yanping Shen, Saratoga Springs, NY (US);

Wei Hong, Clifton Park, NY (US);

Xing Zhang, Clifton Park, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Haiting Wang, Clifton Park, NY (US);

Hui Zhan, Clifton Park, NY (US);

Yong Jun Shi, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Mounir S Amer

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/02532 (2013.01); H01L 21/02614 (2013.01); H01L 21/02636 (2013.01); H01L 21/30604 (2013.01); H01L 29/0847 (2013.01); H01L 29/42376 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/31053 (2013.01); H01L 29/165 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract

One illustrative FinFET device disclosed herein includes a source/drain structure that, when viewed in a cross-section taken through the fin in a direction corresponding to the gate width (GW) direction of the device, comprises a perimeter and a bottom surface. The source/drain structure also has an axial length that extends in a direction corresponding to the gate length (GL) direction of the device. The device also includes a metal silicide material positioned on at least a portion of the perimeter of the source/drain structure for at least a portion of the axial length of the source/drain structure and on at least a portion of the bottom surface of the source/drain structure for at least a portion of the axial length of the source/drain structure.

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