The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Oct. 24, 2017
Globalfoundries Inc., Grand Cayman, KY;
Vara G. Reddy Vakada, Clifton Park, NY (US);
Laegu Kang, Hopewill Junction, NY (US);
Michael Ganz, Clifton Park, NY (US);
Yi Qi, Fishkill, NY (US);
Puneet Khanna, Clifton Park, NY (US);
Srikanth Balaji Samavedam, Fishkill, NY (US);
Sri Charan Vemula, Clifton Park, NY (US);
Manfred Eller, Beacon, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A device includes a substrate having an N-active region and a P-active region, a layer of silicon-carbon positioned on an upper surface of the N-active region, a first layer of a first semiconductor material positioned on the layer of silicon-carbon, a second layer of the first semiconductor material positioned on an upper surface of the P-active region, and a layer of a second semiconductor material positioned on the second layer of the first semiconductor material. An N-type transistor is positioned in and above the N-active region and a P-type transistor is positioned in and above the P-active region.