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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Michael Ganz

This inventor holds 11 USPTO granted patents and 3 published patent applications. Top assignee: Globalfoundries Inc.. Active years: 2014-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Michael Ganz. Retrieved from https://idiyas.com/inventor/michael-ganz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 11 

% Patents Active = 54.5

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 13(Granted Patents)


Location History:

  • Fishkill, NY (US) (2014 - 2016)
  • Clifton Park, NY (US) (2015 - 2019)

Company Filing History:

goldMedal11 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2014-2019

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11 patents (USPTO):Explore Patents
1. 10483172 - Transistor device structures with retrograde wells in CMOS applications (2019-11-19),
2. 10096488 - FinFET semiconductor structures and methods of fabricating same (2018-10-09),
3. 9978588 - Nitride spacer for protecting a fin-shaped field effect transistor (FinFET) device (2018-05-22),
4. 9852954 - Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures (2017-12-26),
5. 9812336 - FinFET semiconductor structures and methods of fabricating same (2017-11-07),
6. 9362357 - Blanket EPI super steep retrograde well formation without Si recess (2016-06-07),
7. 9306036 - Nitride spacer for protecting a fin-shaped field effect transistor (finFET) device (2016-04-05),
8. 9209181 - Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures (2015-12-08),
9. 9099525 - Blanket EPI super steep retrograde well formation without Si recess (2015-08-04),
10. 9099380 - Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device (2015-08-04),
11. 8916442 - Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device (2014-12-23),

Title: The Innovative Journey of Michael Ganz

Introduction: Michael Ganz, a talented inventor hailing from Clifton Park, NY, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Michael Ganz holds several patents in the field of renewable energy technologies, including a solar panel design that increases energy efficiency by 30%.

Career Highlights: With over 20 years of experience in the tech industry, Michael Ganz has worked for leading companies such as SolarTech Innovations and Clean Energy Solutions, where he spearheaded projects that revolutionized the way we harness renewable energy.

Collaborations: Throughout his career, Michael Ganz has collaborated with top researchers from renowned universities such as MIT and Stanford, further solidifying his reputation as a pioneer in the field of sustainable technology.

Conclusion: Michael Ganz's passion for innovation and commitment to creating a more sustainable future continue to inspire the next generation of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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