The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Oct. 10, 2014
Globalfoundries Inc., Grand Cayman, KY;
Vara Govindeswara Reddy Vakada, Fishkill, NY (US);
Laegu Kang, Hopewell Junction, NY (US);
Michael P. Ganz, Fishkill, NY (US);
Yi Qi, Fishkill, NY (US);
Puneet Khanna, Wappinger Falls, NY (US);
Sri Charan Vemula, Fishkill, NY (US);
Srikanth Samavedam, Fishkill, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A methodology enabling the formation of steep channel profiles for devices, such as SSRW FETs, having a resultant channel profiles that enables suppression of threshold voltage variation and the resulting device are disclosed. Embodiments include providing STI regions in a silicon wafer; performing a deep well implantation of a dopant into the silicon wafer between STI regions; forming a recess in the doped silicon wafer between the STI regions; performing a shallow well implantation of the dopant into the silicon wafer in the recess; and forming Si:C on the doped silicon wafer in the recess.