The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Jun. 14, 2013
Globalfoundries Inc., Grand Cayman, KY;
Vara G. Reddy Vakada, Clifton Park, NY (US);
Laegu Kang, Hopewell Junction, NY (US);
Michael Ganz, Clifton Park, NY (US);
Yi Qi, Fishkill, NY (US);
Puneet Khanna, Clifton Park, NY (US);
Srikanth Balaji Samavedam, Fishkill, NY (US);
Sri Charan Vemula, Clifton Park, NY (US);
Manfred Eller, Beacon, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method includes forming a layer of silicon-carbon on an N-active region, performing a common deposition process to form a layer of a first semiconductor material on the layer of silicon-carbon and on the P-active region, masking the N-active region, forming a layer of a second semiconductor material on the first semiconductor material in the P-active region and forming N-type and P-type transistors. A device includes a layer of silicon-carbon positioned on an N-active region, a first layer of a first semiconductor positioned on the layer of silicon-carbon, a second layer of the first semiconductor material positioned on a P-active region, a layer of a second semiconductor material positioned on the second layer of the first semiconductor material, and N-type and P-type transistors.