The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Oct. 14, 2015
Globalfoundries Inc., Grand Cayman, KY;
Vara G. Reddy Vakada, Clifton Park, NY (US);
Laegu Kang, Hopewell Junction, NY (US);
Michael Ganz, Clifton Park, NY (US);
Yi Qi, Fishkill, NY (US);
Puneet Khanna, Clifton Park, NY (US);
Srikanth Balaji Samavedam, Fishkill, NY (US);
Sri Charan Vemula, Clifton Park, NY (US);
Manfred Eller, Beacon, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed herein includes performing a first plurality of epitaxial deposition processes to form a first plurality of semiconductor materials selectively above the N-active region while masking the P-active region, performing a second plurality of epitaxial deposition processes to form a second plurality of semiconductor materials selectively above the P-active region while masking the N-active region, forming an N-type transistor in and above the N-active region and forming a P-type transistor in and above the P-active region.