The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
May. 02, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Emilie M. S. Bourjot, Cohoes, NY (US);
Julien Frougier, Albany, NY (US);
Yi Qi, Niskayuna, NY (US);
Ruilong Xie, Schenectady, NY (US);
Hui Zang, Guilderland, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/28518 (2013.01); H01L 29/0847 (2013.01); H01L 29/41733 (2013.01); H01L 29/41791 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/6681 (2013.01); H01L 29/7853 (2013.01); H01L 2029/7858 (2013.01);
Abstract
Described herein are nanosheet-FET structures having a wrap-all-around contact where the contact wraps entirely around the S/D epitaxy structure, thereby increasing contact area and ultimately allowing for improved S/D contact resistance. Other aspects described include nanosheet-FET structures having an air gap as a bottom isolation area to reduce parasitic S/D leakage to the substrate.