The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Jan. 19, 2018
Globalfoundries Inc., Grand Cayman, KY;
Tao Han, Clifton Park, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Hsien-Ching Lo, Clifton Park, NY (US);
Jianwei Peng, Latham, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Structures for spacers in a device structure for a field-effect transistor and methods for forming spacers in a device structure for a field-effect transistor. A first spacer is located adjacent to a vertical sidewall of a gate electrode, a second spacer located between the first spacer and the vertical sidewall of the gate electrode, and a third spacer located between the second spacer and the vertical sidewall of the gate electrode. The first spacer has a higher dielectric constant than the second spacer. The first spacer has a higher dielectric constant than the third spacer. The third spacer has a lower dielectric constant than the second spacer.