IDiyas

For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Tao Han

USPTO Granted Patents = 11 

Average Co-Inventor Count = 4.7

ph-index = 3

Forward Citations = 33(Granted Patents)


Company Filing History:

goldMedal10 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2016-2022

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11 patents (USPTO):
1. 11522068 - IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures (2022-12-06),
2. 10777463 - Formation of epi source/drain material on transistor devices and the resulting structures (2020-09-15),
3. 10755918 - Spacer with laminate liner (2020-08-25),
4. 10586860 - Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process (2020-03-10),
5. 10453936 - Methods of forming replacement gate structures on transistor devices (2019-10-22),
6. 10431665 - Multiple-layer spacers for field-effect transistors (2019-10-01),
7. 10192791 - Semiconductor devices with robust low-k sidewall spacers and method for producing the same (2019-01-29),
8. 10008456 - Laminated spacers for field-effect transistors (2018-06-26),
9. 9947769 - Multiple-layer spacers for field-effect transistors (2018-04-17),
10. 9831098 - Methods for fabricating integrated circuits using flowable chemical vapor deposition techniques with low-temperature thermal annealing (2017-11-28),
11. 9419101 - Multi-layer spacer used in finFET (2016-08-16),

Title: Innovations of Inventor Tao Han

Introduction

Tao Han is a prominent inventor based in Clifton Park, NY (US), known for his significant contributions to the field of integrated circuit (IC) technology. With a total of 11 patents to his name, he has made remarkable advancements that have influenced the semiconductor industry.

Latest Patents

One of his latest patents involves an IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures. This innovative design includes first and second final gate structures, with the insulating gate separation structure featuring a stepped bottom surface. The structure is designed to enhance the performance of IC products by optimizing the arrangement of gate structures.

Another notable patent focuses on the formation of epi source/drain material on transistor devices. This invention describes a device that includes an epi cavity formed in a semiconductor substrate adjacent to a gate structure of a transistor. The patent details the positioning of epi semiconductor material within the cavity, which is crucial for improving the efficiency and functionality of transistor devices.

Career Highlights

Tao Han has worked with leading companies in the semiconductor industry, including GlobalFoundries Inc. and GlobalFoundries U.S. Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to the advancement of semiconductor technology.

Collaborations

Throughout his career, Tao has collaborated with notable professionals in the field, including Jinping Liu and Jiehui Shu. These collaborations have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Tao Han's contributions to the field of integrated circuits and semiconductor technology are significant. His innovative patents and collaborations with industry leaders highlight his role as a key figure in advancing technology. His work continues to influence the future of the semiconductor industry.

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