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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10777463 B1

PDFFull Text
Date of Patent:
Sep. 15, 2020

Filed:

Jan. 15, 2019

Formation of epi source/drain material on transistor devices and the resulting structures

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Man Gu, Malta, NY (US);

Tao Han, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Julia Slutsker

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

One illustrative device disclosed herein includes an epi cavity formed in a semiconductor substrate adjacent a gate structure of a transistor and an epi semiconductor material comprising first and second portions. The first portion of the epi semiconductor material is positioned within the epi cavity. The second portion of the epi semiconductor material is positioned above the first portion of the epi semiconductor material and above a level corresponding to a level of an upper surface of the semiconductor substrate. The first portion of the epi semiconductor material has a first dimension in a direction corresponding to a gate length direction of the transistor and the second portion of the epi semiconductor material has a second dimension in a direction corresponding to the gate length direction of the transistor, wherein the first dimension is greater than the second dimension.

Find Patent Forward Citations

Gu, Man. (2020). Formation of epi source/drain material on transistor devices and the resulting structures (U.S. Patent No. 10777463). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10777463

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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