The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Mar. 06, 2018
Globalfoundries Inc., Grand Cayman, KY;
Man Gu, Malta, NY (US);
Tao Han, Clifton Park, NY (US);
Junsic Hong, Malta, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Asli Sirman, Malta, NY (US);
Charlotte Adams, Schenectady, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Keith Tabakman, Gansevoort, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of forming a robust low-k sidewall spacer by exposing an upper portion of the spacer to a thermal and plasma treatment prior to downstream processes and resulting device are provided. Embodiments include providing a pair of gates separated by a canyon trench over a substrate, an EPI layer in a bottom of the canyon trench, respectively, and a low-k spacer on each opposing sidewall of the pair; forming a masking layer in a bottom portion of the canyon trench, an upper portion of the low-k spacers exposed; and treating the upper portion of the low-k spacers with a thermal and plasma treatment.