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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Charlotte DeWan Adams

This inventor holds 12 USPTO granted patents and 2 published patent applications. Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2003-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Charlotte DeWan Adams. Retrieved from https://idiyas.com/inventor/charlotte-dewan-adams

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 83.3

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 57(Granted Patents)


Location History:

  • Poughkeepsie, NY (US) (2003 - 2015)
  • Schenectady, NY (US) (2019 - 2024)

Company Filing History:

goldMedal10 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal3 out of 5,671 
 
Globalfoundries Inc.
 patents
where one patent can have more than one assignee

Years Active: 2003-2024

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12 patents (USPTO):Explore Patents
1. 12068415 - Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance (2024-08-20),
2. 11888048 - Gate oxide for nanosheet transistor devices (2024-01-30),
3. 11515427 - Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance (2022-11-29),
4. 11211474 - Gate oxide for nanosheet transistor devices (2021-12-28),
5. 10755918 - Spacer with laminate liner (2020-08-25),
6. 10192791 - Semiconductor devices with robust low-k sidewall spacers and method for producing the same (2019-01-29),
7. 9087722 - Semiconductor devices having different gate oxide thicknesses (2015-07-21),
8. 8941177 - Semiconductor devices having different gate oxide thicknesses (2015-01-27),
9. 8030709 - Metal gate stack and semiconductor gate stack for CMOS devices (2011-10-04),
10. 7741181 - Methods of forming mixed gate CMOS with single poly deposition (2010-06-22),
11. 7230336 - Dual damascene copper interconnect to a damascene tungsten wiring level (2007-06-12),
12. 6566242 - Dual damascene copper interconnect to a damascene tungsten wiring level (2003-05-20),

Title: Innovations of Charlotte DeWan Adams

Introduction

Charlotte DeWan Adams is a prominent inventor based in Poughkeepsie, NY (US). She has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. Her work focuses on advanced transistor structures and methods that enhance the performance of electronic devices.

Latest Patents

Among her latest patents is a method for precise bottom junction formation for vertical transport field effect transistors. This innovation involves the epitaxial growth of lower source-drain regions within a substrate, where adjacent portions are doped to form additional regions. The process includes forming fins and defining bottom junctions beneath these fins, which leads to the creation of intermediate cavities. Additionally, she has developed a method for gate oxide in nanosheet transistor devices, which includes forming nanosheet stacks on a semiconductor substrate and depositing a metal gate to create transistor structures.

Career Highlights

Charlotte has worked with notable companies such as IBM and Globalfoundries Inc. Her experience in these organizations has allowed her to collaborate on cutting-edge technologies and contribute to advancements in the semiconductor industry.

Collaborations

Some of her coworkers include Shahab Siddiqui and Kai Zhao, who have also played significant roles in the development of innovative technologies in their respective fields.

Conclusion

Charlotte DeWan Adams is a trailblazer in semiconductor innovation, with a strong portfolio of patents that reflect her expertise and dedication to advancing technology. Her contributions continue to influence the industry and inspire future inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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