The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Aug. 22, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Yanping Shen, Saratoga Springs, NY (US);

Hui Zang, Guilderland, NY (US);

Bingwu Liu, Clifton Park, NY (US);

Manoj Joshi, Clifton Park, NY (US);

Jae Gon Lee, Waterford, NY (US);

Hsien-Ching Lo, Clifton Park, NY (US);

Zhaoying Hu, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/3083 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 29/0847 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01);
Abstract

Methods form devices by patterning a lower layer to form a fin, and forming a sacrificial gate along sidewalls of the fin. Such methods form a mask with cut openings on the sacrificial gate and remove sections of the fin and the sacrificial gate exposed through the cut openings to divide the fin into fin portions and create cut areas between the fin portions. Additionally, these methods remove the mask, epitaxially grow source/drains in the cut areas, replace the sacrificial gate with a gate conductor, and form a gate contact on the gate conductor over a center of the fin portions.


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