The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Mar. 08, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Wei Hong, Clifton Park, NY (US);

Hong Yu, Clifton Park, NY (US);

Tao Chu, Clifton Park, NY (US);

Bingwu Liu, Clifton Park, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

One illustrative method disclosed herein includes forming a conformal SMCM layer above a conformal high-k gate insulation layer within each of first and second replacement gate cavities (RGC), removing the SMCM layer from the first RGC while leaving the SMCM layer in position within the second RGC, forming a first conformal metal-containing material (MCM) layer above the gate insulation layer within the first RGC and above the SMCM layer in position within the second RGC, removing the first conformal MCM layer and the conformal SMCM layer positioned within the second RGC while leaving the first conformal MCM layer within the first RGC, and forming a second conformal MCM layer above the first conformal MCM layer positioned within the first RGC and above the gate insulation layer positioned within the second RGC.


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