The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Mar. 08, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
George R. Mulfinger, Gansevoort, NY (US);
Hong Yu, Clifton Park, NY (US);
Man Gu, Malta, NY (US);
Jianwei Peng, Clifton Park, NY (US);
Michael Aquilino, Gansevoort, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/31111 (2013.01);
Abstract
Structures for a field-effect transistor and methods of forming a field-effect transistor. A gate structure of the field-effect transistor is arranged over an active region comprised of a semiconductor material. A first sidewall spacer is arranged adjacent to the gate structure. A second sidewall spacer includes a section arranged between the first sidewall spacer and the active region. The first sidewall spacer is composed of a low-k dielectric material.