The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Oct. 07, 2021
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Kaustubh Shanbhag, Slingerlands, NY (US);

Eric S. Kozarsky, Ballston Spa, NY (US);

George R. Mulfinger, Wilton, NY (US);

Jianwei Peng, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/7624 (2013.01); H01L 21/84 (2013.01); H01L 29/808 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to semiconductor devices with a shared common backside well and methods of manufacture. The structure includes: adjacent gate structures over a semiconductor substrate; a common well in the semiconductor substrate under the adjacent gate structures; a deep trench isolation structure extending through the common well between the adjacent gate structures; and a shared diffusion region between the adjacent gate structures.


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