Eric S Kozarsky

Title: Innovations of Eric S Kozarsky

Introduction

Eric S Kozarsky is a notable inventor based in Ballston Spa, NY (US), recognized for his contributions to semiconductor technology. He holds a total of four patents, showcasing his expertise and innovative spirit in the field.

Latest Patents

Among his latest patents is the invention titled "Carbon implantation for thicker gate silicide." This patent describes semiconductor structures that include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor situated between the source and drain structures on the gate dielectric. The source and drain structures incorporate source and drain silicides, while the gate conductor features a gate conductor silicide that is thicker than the source and drain silicides. Another significant patent is "Semiconductor structure with shared well," which pertains to semiconductor devices that utilize a shared common backside well and outlines methods of manufacture. This structure includes adjacent gate structures over a semiconductor substrate, a common well in the substrate under the adjacent gate structures, a deep trench isolation structure extending through the common well, and a shared diffusion region between the adjacent gate structures.

Career Highlights

Eric has worked with prominent companies in the semiconductor industry, including GlobalFoundries Inc. and GlobalFoundries U.S. Inc. His experience in these organizations has contributed to his development as an inventor and innovator in semiconductor technology.

Collaborations

Throughout his career, Eric has collaborated with talented individuals such as Jianwei Peng and Nicholas V Licausi, further enhancing his work and contributions to the field.

Conclusion

Eric S Kozarsky's innovative patents and career in semiconductor technology highlight his significant impact on the industry. His work continues to influence advancements in semiconductor structures and devices.