The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Apr. 28, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Nicholas Vincent Licausi, Watervliet, NY (US);

Eric Scott Kozarsky, Malta, NY (US);

Guillaume Bouche, Albany, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/092 (2006.01); H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/3081 (2013.01); H01L 21/31051 (2013.01); H01L 21/31111 (2013.01); H01L 21/823821 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01);
Abstract

A semiconductor cell includes a substrate and an array of at least five substantially parallel fins having substantially equal fin widths disposed on the substrate. The array includes a predetermined minimum spacing distance between at least one pair of adjacent fins within the array. The array has a first n-type fin for an n-type semiconductor device, and a first p-type fin for a p-type semiconductor device. The first p-type fin is disposed adjacent the first n-type fin and spaced a predetermined first n-to-p distance apart from the first n-type fin. The first n-to-p distance is greater than the minimum spacing distance and less than the sum of the fin width plus twice the minimum spacing distance.


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